A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

摘要

We present a data-calibrated compact model of carbon nanotube (CNT)field-effect transistors (CNFETs) including contact resistance, directsource-to-drain and band-to-band tunneling currents. The model captures theeffects of dimensional scaling and performance degradations due to parasiticeffects and is used to study the trade-offs between the drive current andleakage current of CNFETs according to the selection of CNT diameter, CNTdensity, contact length, and gate length for a target contacted gate pitch. Wedescribe a co-optimization study of CNFET device parameters near the limits ofscaling with physical insight, and project the CNFET performance at the 5-nmtechnology node with an estimated contacted gate pitch of 31 nm. Based on theanalysis including parasitic resistance, capacitance, and tunneling leakagecurrent, a CNT density of 180 CNTs/{\mu}m will enable CNFET technology to meetthe ITRS target of drive current (1.33 mA/{\mu}m), which is within reach ofmodern experimental capabilities